2007-09-01 rev.2.2 page 1 idb23e60 fast switching emcon diode product summary v rrm 600 v i f 23 a v f 1.5 v t j max 175 c feature ? 600 v emcon technology ? fast recovery ? soft switching ? low reverse recovery charge ? low forward voltage ? 175c operating temperature ? easy paralleling pg -to263-3-2 pin 1 pin 2 pin 3 nc c a marking d23e60 type package ordering code idb23e60 pg -to263-3-2 - maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 600 v continous forward current t c =25c t c =90c i f 41 28 a surge non repetitive forward current t c =25c, t p =10 ms, sine halfwave i fsm 89 maximum repetitive forward current t c =25c, t p limited by t jmax , d =0.5 i frm 65 power dissipation t c =25c t c =90c p tot 115 65 w operating and storage temperature t j , t st g -55... +175 c soldering temperature reflow soldering, msl1 t s 245 c
2007-09-01 rev.2.2 page 2 idb23e60 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 1.3 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 75 50 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics reverse leakage current v r =600v, t j =25c v r =600v, t j =150c i r - - - - 50 1900 a forward voltage drop i f =23a, t j =25c i f =23a, t j =150c v f - - 1.5 1.5 2 - v 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2007-09-01 rev.2.2 page 3 idb23e60 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics reverse recovery time v r =400v, i f =23a, d i f /dt =1000a/s, t j =25c v r =400v, i f =23a, d i f /dt =1000a/s, t j =125c v r =400v, i f =23a, d i f /dt =1000a/s, t j =150c t rr - - - 120 164 170 - - - ns peak reverse current v r =400v, i f = 23a, d i f /dt =1000a/s, t j =25c v r =400v, i f =23a, d i f /dt =1000a/s, t j =125c v r =400v, i f =23a, d i f /dt =1000a/s, t j =150c i rrm - - - 17 19.5 21.5 - - - a reverse recovery charge v r =400v, i f =23a, d i f /dt =1000a/s, t j =25c v r =400v, i f =23a, d i f /dt =1000a/s, t j =125c v r =400v, i f =23a, d i f /dt =1000a/s, t j =150c q rr - - - 970 1580 1770 - - - nc reverse recovery softness factor v r =400v, i f =23a, d i f /dt =1000a/s, t j =25c v r =400v, i f =23a, d i f /dt =1000a/s, t j =125c v r =400v, i f =23a, d i f /dt =1000a/s, t j =150c s - - - 4.4 4.8 5 - - -
2007-09-01 rev.2.2 page 4 idb23e60 2 diode forward current i f = f( t c ) parameter: t j 175c 25 50 75 100 125 c 175 t c 0 5 10 15 20 25 30 35 a 45 i f 1 power dissipation p tot = f ( t c ) parameter: t j 175 c 25 50 75 100 125 c 175 t c 0 15 30 45 60 75 90 w 120 p tot 3 typ. diode forward current i f = f ( v f ) 0 0.5 1 1.5 v 2.5 v f 0 10 20 30 40 50 a 70 i f -55c 25c 100c 150c 4 typ. diode forward voltage v f = f ( t j ) -60 -20 20 60 100 c 160 t j 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v 2 v f 11,5a 23a 46a
2007-09-01 rev.2.2 page 5 idb23e60 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 100 150 200 250 300 350 400 ns 500 t rr 46a 23a 11.5a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 400v, t j = 125 c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 nc 2100 q rr 11.5a 23a 46a 7 typ. reverse recovery current i rr = f (d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 4 6 8 10 12 14 16 18 20 a 24 i rr 46a 23a 11.5a 8 typ. reverse recovery softness factor s = f(d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 3 4 5 6 7 8 9 10 11 13 s 46a 23a 11.5a
2007-09-01 rev.2.2 page 6 idb23e60 9 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w idp23e60 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2007-09-01 rev.2.2 page 7 idb23e60
2007-09-01 rev.2.2 page 8 idb23e60 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
